Ssd 750 evo
The Samsung 750 EVO (120GB & 250GB) SSD Review: A Return To Planar NAND
Since the introduction of their first consumer TLC SSD with the SSD 840, Samsung's consumer/retail SATA SSD lineup has consisted of two product families: the MLC-based Pro drives, and the TLC-based 840 and EVO drives. The strength of Samsung's SSD controllers and the advantages of 3D NAND have allowed the 850 EVO to maintain a solidly mid-range position in the SSD market well above any other drive using TLC NAND.
Meanwhile, with the strength of the 850 EVO as a near-midrange product - and with pricing to match - like so many other vendors over the last year, Samsung has also been developing a true low cost TLC drive for the mass market. The end result is the Samsung 750 EVO, which we're revieiwng today. The 750 EVO establishes a new budget-oriented product line that competes in the cutthroat low end of the market where price per GB is the most important aspect of the product.
There are several design choices that help minimize the cost of the 750 EVO, aside from the obvious choice of TLC over MLC. The MGX controller it borrows from the lower capacity 850 EVOs is a dual-core version of Samsung's usual triple-core architecture. Similarly, the 750 EVO is only available in 120GB and 250GB sizes, so there is no high-priced high capacity model. Consequently, with only two small capacities, the 750 EVO line is served by a single tiny PCB layout, made even smaller by the fact that Samsung has put the 256MB of DRAM in the same package as the SSD controller.
Samsung MGX controller with onboard 256MB DRAM
But the most significant aspect of the 750 EVO is that it doesn't use the 3D NAND that has been a key competitive advantage for Samsung's 850 product lines. Samsung has continued development of planar NAND even after transitioning their retail SSDs to 3D NAND, and the 750 EVO in turn uses 16nm planar TLC. It doesn't offer the same performance or endurance of Samsung's 3D NAND, but it does significantly lower the cost of the drive.
128GB of 16nm TLC NAND in a single package
The 16nm TLC NAND is the successor to Samsung's 19nm TLC that had a troubled tenure in the 840 EVO. With the 840 EVO, data at rest on the drive degraded over time and eventually required the use of more thorough and thus slower error correction when read back. As a result the 750 EVO inherits the benefits of all the firmware work Samsung did to mitigate the read speed degradation. This, for what it's worth, gives Samsung some degree of a leg-up against other 16/15nm TLC drives that face the same challenges.
| Samsung TLC SATA SSD Comparison | ||||
| Drive | 750 EVO 120GB | 750 EVO 250GB | 850 EVO 120GB | 850 EVO 250GB |
| Controller | MGX | MGX | ||
| NAND | Samsung 128Gb 16nm TLC | Samsung 32-layer 128Gbit TLC V-NAND | ||
| DRAM | 256MB | 256MB | 256MB | 512MB |
| Sequential Read | 540MB/s | 540MB/s | 540MB/s | 540MB/s |
| Sequential Write | 520MB/s | 520MB/s | 520MB/s | 520MB/s |
| 4KB Random Read | 94K IOPS | 97K IOPS | 94K IOPS | 97K IOPS |
| 4KB Random Write | 88K IOPS | 88K IOPS | 88K IOPS | 88K IOPS |
| 4KB Random Read QD1 | 10K IOPS | 10K IOPS | 10K IOPS | 10K IOPS |
| 4KB Random Write QD1 | 35K IOPS | 35K IOPS | 40K IOPS | 40K IOPS |
| DevSleep Power | 6mW | 2mW | ||
| Slumber Power | 50mW | 50mW | ||
| Active Power (Read/Write) | 2.1W / 2.4W (Average) | 2.4W / 2.8W (Average) | Max 3.7W / 4.4W | |
| Encryption | AES-256, TCG Opal 2.0, IEEE-1667 (eDrive) | AES-256, TCG Opal 2.0, IEEE-1667 (eDrive) | ||
| Endurance | 35TB | 70TB | 75TB | |
| Warranty | Three years | Five years |
By and large the performance specifications for the 750 EVO match the lower capacity 850 EVO, though a slightly lower random write speed at a queue depth of one hints that the 750 EVO may require a bit more background wear leveling work. The feature set is identical to the 850 EVO, making the 750 EVO one of the few low-end drives to support TCG Opal encryption.
Samsung's marketing strategy for the 750 EVO is a little different from their previous retail SSD products. The 750 EVO is targeted specifically at system integrators and system builders, rather than at users looking to upgrade an existing machine. Consequently, they aren't pushing to make the 750 EVO available from as wide a range of retail outlets. Enough of the major online retailers have it in stock that it is not difficult to obtain.
This review will focus on comparing the 750 EVO against Samsung's other SATA SSDs and against other current-generation low-end TLC SSDs of comparable capacity. Our Bench tool can assist in making other comparisons.
www.anandtech.com
Samsung Releases 750 EVO SATA SSD
After an accidental leak in November that was spotted by our friends at Tom's Hardware, the Samsung 750 EVO has now officially launched worldwide. Since the introduction of their first consumer TLC SSD with the 840, Samsung's consumer/retail SATA SSD lineup has consisted of two product families: the MLC-based Pro drives, and the TLC-based 840 and EVO drives. With the 750 EVO, Samsung is creating a new budget-oriented product line that makes them a participant in the race to the bottom that they had been avoiding by positioning the 850 EVO as a mid-range SSD.
There are several design choices that help minimize the cost of the 750 EVO, aside from the expected choice of TLC over MLC. The MGX controller it borrows from the lower capacity 850 EVOs is a dual-core version of Samsung's usual triple-core architecture. The 750 EVO will only be available in 120GB and 250GB sizes, so there won't be any sticker shock of higher capacities and the PCB only needs to be large enough to accommodate the needs of the 250GB model. Both capacities are listed as having 256MB of DRAM, where the 850 EVO 250GB has 512MB of DRAM. But the most significant aspect of the 750 EVO is that it doesn't use 3D NAND.
It may come as a surprise that the 750 EVO marks a return to planar NAND. Samsung has proudly led the industry in transitioning to 3D NAND, but they haven't entirely abandoned the development of planar NAND flash. Earlier this month they made two presentations at ISSCC of their R&D accomplishments: one about a 256Gb TLC built on their 48-layer third generation V-NAND process, and one about a 128Gb MLC built on a 14nm process. The 750 EVO uses a 128Gb 16nm TLC, a larger die based on the same process as the 64Gb MLC we found in the SM951.
The 16nm TLC NAND is the successor to Samsung's 19nm TLC that had a troubled tenure in the 840 EVO. More than a year after launch, 840 EVO owners started reporting degraded read speed when accessing old data that had not been written recently. Samsung acknowledged the issue, then provided a firmware update and Performance Restoration tool less than a month later, but had to issue a second firmware update six months after that. The 750 EVO inherits the results of all the work Samsung did to mitigate the read speed degradation, and there's no reason to expect it to be any more susceptible than the competition using similarly dense planar TLC built on Toshiba's 15nm process or Micron's 16nm process.
| Samsung TLC SATA SSD Comparison | ||||
| Drive | 750 EVO 120GB | 750 EVO 250GB | 850 EVO 120GB | 850 EVO 250GB |
| Controller | MGX | MGX | ||
| NAND | Samsung 16nm TLC | Samsung 32-layer 128Gbit TLC V-NAND | ||
| DRAM | 256MB | 256MB | 256MB | 512MB |
| Sequential Read | 540MB/s | 540MB/s | 540MB/s | 540MB/s |
| Sequential Write | 520MB/s | 520MB/s | 520MB/s | 520MB/s |
| 4KB Random Read | 94K IOPS | 97K IOPS | 94K IOPS | 97K IOPS |
| 4KB Random Write | 88K IOPS | 88K IOPS | 88K IOPS | 88K IOPS |
| 4KB Random Read QD1 | 10K IOPS | 10K IOPS | 10K IOPS | 10K IOPS |
| 4KB Random Write QD1 | 35K IOPS | 35K IOPS | 40K IOPS | 40K IOPS |
| DevSleep Power | 6mW | 2mW | ||
| Slumber Power | 50mW | 50mW | ||
| Active Power (Read/Write) | 2.1W / 2.4W (Average) | 2.4W / 2.8W (Average) | Max 3.7W / 4.4W | |
| Encryption | AES-256, TCG Opal 2.0, IEEE-1667 (eDrive) | AES-256, TCG Opal 2.0, IEEE-1667 (eDrive) | ||
| Endurance | 35TB | 70TB | 75TB | |
| Warranty | Three years | Five years |
The 750 EVO's performance specifications are almost identical to the 850 EVOs of the same capacity. The 4kB random write latency is a little bit worse, but read speeds are the same and any other differences in the write performance of the 15nm flash are masked by the SLC write cache. The reduced warranty period of three years is typical for this product segment, and while the write endurance specifications may look quite low, they're sufficient given the capacity and intended use. It's nice to see that the 750 EVO keeps the encryption capabilities fully enabled, as many budget drives lack hardware encryption support.
Given the aforementioned similarities with the 850 EVO, it should come as no surprise that the 750 EVO is in part a replacement. The previously announced and now imminent migration to Samsung's 48-layer V-NAND won't apply to the 120GB 850 EVO, as the 256Gb per die capacity would mean building a drive with only four flash chips. That is undesirable from both a performance standpoint and from a packaging standpoint—Samsung will otherwise have no reason to stack fewer than 8 dies per package.
A few online retailers are listing the 750 EVO already, albeit with limited or no stock. The MSRP of $54.99 for the 120GB model and $74.99 for the 250GB model is about $10 cheaper than what the 850 EVO is currently going for, and any sales below MSRP will make for a very competitive price.
www.anandtech.com
Samsung 750 EVO SSD Review
Samsung decided to bring its low-cost SSD 750 EVO to the U.S. after shipping it for months in Asia. The drive employs planar (2D) three-bit per cell NAND like the 840 EVO, but sees its controller upgraded with low-density parity check (LDPC) error correction technology found on the 850 family.
Samsung's 840 EVO arrived with great fanfare and generated a lot of excitement, becoming the best-selling SSD of all time. Over time though, a problem emerged. Customers found that older data on the drives would read back much slower than fresh data. Samsung fired back with a pair of firmware upgrades and we haven't heard much of the issue since then.
Although it was never officially mentioned, we suspect the underlying issue had to do with the 840 EVO's error correction engine. Samsung recently told us that the 840 EVO used BCH ECC technology, similar to many other SSDs with MLC flash. Newer drives with TLC NAND employ a technology called LDPC (low-density parity-check), which is a much stronger form of error correction that uses both hardware and software checks to recover bit errors.
The new SSD 750 EVO uses the 850 EVO's controller equipped with the more advanced LDPC ECC engine. The SSD was introduced in Japan and other Asian markets two months ago. We assumed the 750 EVO was Samsung's way of burning through a stockpile of planar (2D) NAND before transitioning to 48-layer 3D flash. The company recently stated that planar flash still has a future, and will not disappear from its line-up anytime soon. Samsung's 2D NAND is manufactured using 16nm lithography, and we've heard rumors of a 14nm node in development.
The 750 EVO also crams a 256MB DDR3 memory module in the same package as the MGX controller, which should reduce latency between the processor and its DRAM buffer. This is the first time we've seen the advanced design in a Samsung SSD.
Specifications
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The SSD 750 EVO only ships in two capacities: 120 and 250GB. Armed with a reworked MGX controller, 256MB of DDR3 and TLC flash, it fits in the SSD market's lowest-cost segment. At first we were thrown by the lack of visible DRAM, particularly since Samsung's controller package is similarly sized. Surely, though, the integrated buffer represents a step toward reducing costs.
Samsung's SSD 750 EVO claims some impressive performance figures. Its sequential read performance peaks at 540 MB/s. Both capacities also peak at 520 MB/s sequential buffered writes. And once again, Samsung manages to squeeze out 10,000 random read IOPS with minimal parallelism. This is attributable to the quad-plane design that doubles the available bandwidth between the controller and flash.
We're told that the 750 EVO targets system builders, and will allow integrators to add SSDs to low-cost notebooks and desktops. Its performance specifications are similar to the company's retail SSDs, but at much lower endurance levels. To compare, the 120GB 750 EVO is rated for 35 terabytes written. The same capacity 850 EVO sports a 75 TBW specification. The gap increases when you step up to 250GB (70 TBW versus 150 TBW).
You do get support for AES-256 full disk encryption, enabling TCG Opal v.2.0. The drives also work with Microsoft's BitLocker feature.
Pricing, Warranty And Accessories
The MSRP for the 120GB model is $54.99 and the 250GB capacity model is priced at $74.99. We expect to see more prevalent use of the SSDs among the tier-two system builders like Origin PC, CyberPower and AVA Direct. Most of those companies will handle warranty claims directly, but Samsung does back the drive with a three-year warranty capped at the TBW rating.
Our test samples arrived surrounded by bubble wrap. At first we assumed that Samsung would make this a white box release like its SM951 family. We later learned the 750 EVO will ship in retail packaging that includes documentation.
The 750 EVO does support Samsung's Magician software. Moreover, this series supports the company's Rapid Mode technology, which utilizes DRAM as a read and write cache. Samsung's Data Migration Tool is compatible as well, though neither software package is included and will need to be downloaded.
A Closer Look
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According to Samsung, the 750 EVO will ship in a full retail box similar to the 850 EVO and 850 Pro models. At a glance, the 750 EVO looks like a standard 2.5-inch SSD with a slim 7mm z-height. This is the same chassis the company uses on other products like the 850 EVO.
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Inside, we find a very small PCB hosting a handful of components. The images show the 250GB model with flash on both sides of the board. Again, the missing DRAM caught us off guard. Samsung didn't talk about its integration efforts during our call a week ago. But by pulling the DDR3 onto the controller's package, latency between the two components should be reduced. Samsung isn't talking about DRAM clock rates or timings, though.
The 120GB model loses the NAND package on the back of the PCB. This is a very low-cost design with low overhead.
Current page: Specifications, Pricing, Warranty And Accessories
Next Page Performance TestingPage 2
Nearly all of the drives in our comparison charts utilize TLC NAND with write enhancement mechanisms to deliver high burst speeds that are not sustainable for more than a few seconds.
Samsung's SSD 850 EVO is the current mid-range performance leader. Its quad-plane TLC flash breaks the mold and delivers longer sustained write speeds than other TLC-based drives with flash from Toshiba and Micron. The Plextor M6V is a newer model that uses the same approach as the Reactor. It comes equipped with the same SMI SM2246EN controller, but pairs it with Toshiba's 15nm MLC NAND.
To read about our storage tests in-depth, please check out How We Test HDDs And SSDs. Four-corner testing is covered on page six of our How We Test guide.
Sequential Read Performance
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Even with eight levels of charge to sort through, nearly every drive hits the SATA interface's maximum performance level. As always, queue depth is important to consider, and we see more performance variation at the low queue depths encountered on a daily basis.
Samsung's 750 EVO 250GB outperforms the 850 EVO, though the results indicate only a slight difference between both products. The 120GB 750 EVO does give up some sequential read speed at low queue depths compared to the other Samsung drives, but that's to be expected since it's working with half as many flash dies.
Sequential Write Performance
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Samsung's TurboWrite algorithm performs well in our tests, even though we don't leave a lot of time for the buffer to flush between runs. Many competing products show up as waves, since they struggle to flush the emulated SLC buffer data to much slower TLC.
The third image illustrates the large block size sequential roll-off and sustained sequential write performance. Samsung's 750 EVO maintains writes in excess of 200 MB/s. Until recently, Samsung was the only vendor to hit that level using TLC NAND. Phison has caught up, though, with its direct-to-die write algorithm. We simply don't have a low-capacity Phison S10-based drive to add to our charts.
The 120GB SSD 750 EVO reaches the same performance in the buffer stage, but writes quickly drop to 140 MB/s after an extended load. TLC's native write speed won't become an issue until you need to send a lot of data to the drive at one time. Installing software and transferring large photo albums are two common examples of when you'd do that.
Random Read
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The emulated SLC buffer works to keep random performance high. Even though the SSD 750 EVO should be a very low-cost drive, it still delivers admirable random read results, which is important because most of your data transactions take the form of small-block reads and writes. The trade-off is a hit to endurance, which becomes an issue later in the product's life.
Random Write
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The 750 EVO and 850 EVO are separated by write performance. When we test with small blocks of data written randomly, the gap between them grows more than we saw in our sequential tests. Even at low queue depths, the two drives seem pretty similar to each other at any given capacity point. But as the queue depth increases, so does the 850 EVO's edge. Then again, the 250GB 750 EVO responds to our random write workload more favorably than the non-Samsung SSDs we benchmarked.
www.tomshardware.com
Samsung 750 EVO 500GB SSD Review
The Samsung SSD 750 EVO 500GB packs mainstream performance but entry-level endurance specifications, which is a game-changing mix that can disrupt the entry-level SSD market.
We chose a combination of entry-level and mainstream SSDs to compare to the 750 EVO. The Adata SP550, Crucial BX200, Mushkin Triactor, and OCZ Trion 150 make up the entry-level products with prices that range from $109.99 to $120.99.
The mainstream products include the Intel SSD 540s and the SK hynix SL308, which both feature planar SK hynix 16nm TLC NAND, and the industry-leading Samsung 850 EVO with 3D TLC NAND. The new SL308 starts the mainstream pricing at $129.99, while the Intel 540s retails for $143.99 and the Samsung 850 EVO is at $159.99. The 750 EVO 500GB now sells for $149.99 at several large resellers.
Every product in the chart utilizes 3-bit per cell flash, which marks the first time we've removed all MLC products from an entry-level chart. MLC prices have shot up, taking retail SSD pricing with it. TLC flash is projected to achieve 80% market share by the end of 2016, which is an eventually that we've warned about for several months. Like it or not, now if you want MLC you have to pay a premium for it.
To read about our storage tests in-depth, please check out How We Test HDDs And SSDs. Four-corner testing is covered on page six of our How We Test guide.
Sequential Read Performance
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All of the products in our test deliver strong sequential read performance. The Crucial BX200 480GB is the only drive that fails to exceed 500 MB/s at low queue depths. The Samsung 850 EVO leads the 750 EVO by 21 MB/s at QD2.
Sequential Write Performance
Many of the products on the chart have inconsistent write performance. All of the SSDs in the test use some form of SLC-programmed buffer area to increase burst performance while writing data, which creates two tiers of sequential write performance. Some of the SSDs write 128 KB sequential data at less than 100 MB/s after they have exhausted the SLC buffer.
The Samsung SSD 750 EVO delivers nearly 500 MB/s in the SLC buffer zone and 325 MB/s of native TLC performance. The performance is much higher than the other products (barring the 850 EVO and SK hynix SL308).
SLC buffers are becoming the norm, so we are working on a new test that will measure SLC and TLC performance separately, which will allow us to list the results in different charts. Companies tackle the SLC buffer differently, so we are working to isolate the variable amount of SLC area. Some manufacturers use a static volume with a fixed buffer size, while others use a dynamic volume that alters the buffer size based on how much data the user has stored on the flash.
Random Read Performance
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The SSD 750 EVO follows the 850 EVO, and even the 850 Pro, with high random performance at queue depth 1. The new SK hynix SL308 nearly hits the same milestone, but the other TLC-based products can't compete. Samsung SSDs are excellent at real-world application performance, and this synthetic test shows why. This test defines the gap between Samsung and the other entry-level SSDs, just as it has highlighted the difference in the mainstream and premium markets for the last two years. Samsung has engineered in some SSD magic at low queue depths and is using it to dominate the market.
The 750 EVO even outperforms the 850 EVO in random reads at high queue depths. The 750 EVO's controller has a year of firmware maturity under its belt, and Samsung used the time to optimize performance.
Random Write Performance
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Random performance defines the user experience during a normal desktop workload, and Samsung runs away from the competition again. The 750 and 850 EVO deliver superior small block performance at low queue depths, but the Samsung SSDs also scale very well up to higher queue depths.
80 Percent Sequential Mixed Workload
Our mixed workload testing is described in detail here, and our steady state tests are described here.
The SSD 750 EVO 500GB trailed by a small amount in both of our previous sequential tests, but the small delta wasn't enough to lop off this much performance during a mixed read/write workload. It appears the 2-core version of the MGX controller can't deliver the same performance in a mixed sequential workload as the Samsung 3-core controllers.
When Samsung introduced its 3-core design it announced that it dedicated one core to reading, one to writing and the other to background activity. We translated that into one for reading, one for writing and one for arithmetic. The mixed sequential workload chart reveals that the 750 EVO's performance slows when you move three CPU-intensive tasks to just two cores.
80 Percent Random Mixed Workload
The SSD 750 EVO's dual core architecture wasn't enough to drag its performance down to the level of other TLC SSDs during a mixed random workload. The other products deliver low random performance to start with, but the two Samsung SSDs deliver very high random performance during the entire test.
Sequential Steady State
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Samsung did not target the 750 EVO at the professional market, and the steady state performance reveals that users should avoid using it for extreme write environments. The endurance ratings indicate the same, but that won't stop some users from trying.
Random Write Steady State
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The SSD 750 EVO is a beast with random data. The performance stays over 5,000 IOPS and remains consistent even under steady-state conditions. We didn't expect performance to remain this high, and you can see that many of the other entry-level TLC-based products have a difficult time in this test; some SSDs can even drop to the single-digit IOPS range during intense workloads.
www.tomshardware.com
750 EVO 250GB
The number of benchmark samples for this model as a percentage of all 18,228,080 SSDs tested.
| 750 EVO 250GBSamsung £88Bench 98%, 37,388 samples | 1x |
| EDIT WITH CUSTOM PC BUILDER | Value: 53% - Above average | Total price: £908 |
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Samsung SSD 750 EVO SATA Solid State Drive Review
The Samsung SSD 850 EVO has become somewhat of a yardstick, by which other SATA-based SSDs are measured, and not without good reason. It set a very high bar when we reviewed it more than a year-and-a-half ago and it still holds up against newer products.
Samsung has also come out with a newer drive series, the SSD 750 EVO, that sits one step below the 850 EVO in the company's line-up and is meant to be more affordable while still offering competitive performance. And by and large, it holds up in our tests as you'll see a little later.
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Model Code (Capacity)
FORM FACTOR INTERFACE
DIMENSION (WXHXD) WEIGHT STORAGE MEMORY
CONTROLLER CACHE MEMORY
Special Feature
OPERATING TEMPERATURE | Performance SEQUENTIAL READ SEQUENTIAL WRITE RANDOM READ (4KB, QD32)
POWER CONSUMPTION (IDLE) RELIABILITY (MTBF) Software
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Find The Samsung SSD 750 EVO @ Amazon.com
Technically, the 750 EVO is different from the 850. The 750 EVO uses 3-bit MLC NAND technology, rather than the 48 layer V-NAND that the 850 EVO uses. There are many similarities, however. The 750 EVO features Samsung's TurboWrite technology, like the 850 EVO, for a max of 540 MB/s for sequential reads and 520 MB/s sequential writes. The 750 EVO also offers a max 97,000 and 88,000 IOPS for random reads and writes, respectively.
The 750 EVO also has a 256MB DRAM cache (512MB on the 500GB drive) and the Samsung MGX controller, AES 256 encryption and a 1.5 MTBF rating. The warranty is for three years as well. These specs pretty much all match the 850 EVO.
In addition to some firmware tweaks, the main difference is the type of NAND used. So why are the specs so similar? The legacy SATA interface is the equalizer. Even today's more affordable solid state drive offerings are bumping into the limitations of the interface.
On the outside, there is another difference from the 850 EVO. The 750 EVO is largely made of plastic, making it very lightweight. It weighs just 45g, compared to 66g for the 1TB version of the 850 EVO.
Like its older brothers, the 750 EVO features the same dual-core Samsung MGX controller. The 850 Pro series has a triple core chip, but Samsung removed one core to save power because that extra core didn't help performance much on the lower capacity drives.
Another technology incorporated from older drives is TurboWrite, which uses a small portion of the NAND like an SLC write buffer. This allows the TLC NAND to perform more like a MLC drive for writes, giving write performance a massive bump. The 750 EVO also supports Samsung RAPID mode, via the included Magician utility. RAPID uses a portion of system RAM as an ultra-fast data cache. As this screencap of HD Tune Pro shows, writes are much faster when RAPID and the TurboWrite buffer is being utilized.
hothardware.com
